Removal of organic substances by UV + O3, UV cure by UV + N2
Main specifications
Light source: low pressure mercury lamp (253.7, 184.9 nm), Stage temperature setting range: Room temperature to 300 ℃
Process gas
O3, O2, N2
Sample size
Maximum ⌀200 mm, thickness 2 mm or less
Remarks
Two-fluid cleaner
Manufacturer name (model)
Actes (ADE-3000S)
Use
Two-fluid spray cleaning device using water or organic solvent (IPA, etc.)
Main specifications
Wafer rotation speed: 0 to 3000 rpm, wafer swing angle: 0 to 40°
Sample size
□20 mm or 4 inch
Remarks
HMDS treatment system
Manufacturer name (model)
Self-made
Use
Apply resist such as OFPR to the surface of the silicon wafer In some cases, surface treatment is more appropriate than OAP dripping. Since the series of treatments after washing with sulfuric acid hydrogen peroxide can be handled without touching the atmosphere, the possibility of resist coating failure is reduced.
Tohoku University
