Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesFilm formation/deposition

table of contents

Film formation/deposition

Mist coater

Mist coater
Manufacturer name (model)Nagase Techno-Engineering (PDR-04EXP)
Sample sizeMaximum 10 cm × 10 cm
Others
Remarks

ULVAC 2 inch sputter

ULVAC 2 inch sputter
Manufacturer name(Model)ULVAC
TemperatureMaximum 500℃
ProcessGasAr
Sample size⌀2 inch
Others
Remarks

Plasma-enhanced TEOS CVD

Plasma-enhanced TEOS CVD
Manufacturer name (model)Samco (PD-100ST)
TypePE-CVD
Materials that can be depositedSiO2,SiOC
Deposition temperature80–350 ℃
Deposition rateApproximately 80 nm/min
Sample sizeMaximum 6 inch
Others
Remarks

LP-CVD

LP-CVD
Manufacturer name (model)Tokyo Electron (MARS-II)
TypeLow-pressure CVD (LP-CVD)
Materials that can be depositedSiO2, SiN, Poly-Si
Deposition temperature600℃-700℃
Deposition rate2–10 nm/min
Sample size⌀2 inch
Others
Remarks

Plasma-enhanced SiN CVD

Plasma-enhanced SiN CVD
Manufacturer name (model)Samco (PD-220NL)
TypePlasma CVD (PE-CVD)
Materials that can be depositedSiN, SiO2
Deposition temperature200–350 ℃
Deposition rate80 nm/min
Sample size⌀2 inch
Others
Remarks

UHV-CVD

UHV-CVD
Manufacturer name (model)Air Water (VCE-S2013TH)
TypeUltra-high vacuum CVD (UHV-CVD)
Materials that can be depositedEpitaxial Si
Deposition temperature600–800 ℃
Deposition rate2 nm/min
Sample size⌀2 inch
Others
Remarks

SiCN Cat-CVD

SiCN Cat-CVD
Manufacturer name (model)Self-made
TypeW Wire thermal CVD
Materials that can be depositedSiCN (Gas source: HMDS + NH3)
Deposition temperature150–300 ℃
Deposition rate2.5–50 nm/min
Sample size⌀2 inch, □20 mm
OthersCatalyst filament: Tungsten (⌀0.5 mm), Filament temperature: 1600–1900 ℃, with heat shield
Remarks

Plasma/ozone TEOS CVD

Plasma/ozone TEOS CVD
Manufacturer name (model)YOUTEC (21-0266SA)
TypeCVD
Materials that can be depositedSiO2
Deposition temperatureApprox. 300 nm/min
Deposition rateAbout300nm/min
Sample sizeMaximum 8 inch
Others
Remarks

Plasma CNT-CVD

Plasma CNT-CVD
Manufacturer name (Manufacturer name) Model)Self-made
TypePE-CVD
Materials that can be depositedCNT
Deposition temperature650–700 ℃ (measured by a radiation thermometer)
Deposition rate1 nm, 2 μm/min on Fe
Sample sizeSize that can be placed on a square mesh of about 50 mm
OthersExample of film formation conditions: 600 V DC plasma, acetylene 10 Pa, hydrogen 100 Pa
Remarks

Plasma diamond CVD

Plasma diamond CVD
Manufacturer name (model)Seki Technotron (AX5200)
TypeMPECVD
Materials that can be depositedGraphene nanowalls, diamond
Deposition temperatureRT–400 ℃
Deposition rateLow
Sample size10 × 10 mm
OthersMicrowave power: 650 W , Gas: H2, CH4
Remarks

RF magnetron sputter (Shibaura) #1

RF magnetron sputter (Shibaura) #1
Manufacturer name (model)Shibaura Mechatronics (CFS-4ES)
Materials that can be depositedMetallic and non-metal compatible
Samples that can be introducedDurable and particle-free sample
Sample sizeMaximum 4 inch × 2
Deposition temperatureRT–300 ℃
Process gasAr, O2, N2
OtherMaximum 300 W, 3 Target can be installed
Remarks

RF magnetron sputter (Shibaura) #2

RF magnetron sputter (Shibaura) #2
Manufacturer name (model)Shibaura Eletec (CFS-4ES-232)
Materials that can be formedPure metal only (other than magnetic material)
Samples that can be introducedA sample that is resistant and does not generate particles
Sample sizeMaximum 4 inch × 2
Deposition temperatureRoom temperature
Process gasAr
Others3 Targets can be installed
Remarks

Facing target DC sputter

Facing target DC sputter
Manufacturer name (model)Osaka Vacuum (FTS- R3S)
Materials that can form a filmFe, Co, Ni
Samples that can be introducedSamples that are sputter resistant and do not generate particles
Sample size□20 mm× 4 sheets
Sample film formation temperatureRT–400 ℃
Process gasAr, Kr, N2
OtherLift Can be turned off
Remarks

Facing target RF sputter

Facing target RF sputter
Manufacturer name (model)Osaka Vacuum (FTS-1CL)(FTS-1CL)
Materials that can be depositedVarious metals
Sample size□20 mm
Deposition temperatureRT–700 ° C
ProcessGasAr
OthersOrganic material NG
Remarks

RF magnetron sputter (ULVAC)

RF magnetron sputter (ULVAC)
Manufacturer name (model)ULVAC (MB97-0007)
Materials that can be depositedAl, W, Ni
Sample size⌀2 inch
TemperatureRT
OthersOrganic material NG
Remarks

ECR Sputter

ECR Sputter
Manufacturer name (model)JSW Afty (AFTEX EC-2300)
Materials that can be formed]AlN only
Samples that can be introducedSpatter resistant and particles that does not occur
Sample size4 inch, □20 mm
Formation temperatureRT–300 ℃
Process gasAr + N2
OthersLift-off not possible
Remarks

ECR ion beam sputter

ECR ion beam sputter
Manufacturer name (model)Elionix (EIS-220)
Materials that can be depositedSemiconductors, materials for MEMS, etc.
Sample sizeMaximum 3 inch
Capsulation temperatureRT–350 ℃
Process gasAr, N2
OthersOrganic matter OK, lift-off possible
Remarks

RF magnetron sputter (ANELVA)

RF magnetron sputter (ANELVA)
Manufacturer name (model)Anelva (SPC-350)
Materials that can be formedMetal, Si, SiO2
Samples that can be introducedSpatter resistant and generation of particles No sample
Sample sizeMaximum ⌀2 inch
Deposition temperatureRT–400 ℃
Process gasAr, O2, N2
OthersOrganic material NG, lift-off not possible, reactive sputtering possible, load lock chamber available, 3 Target can be installed
Remarks

High-temp RF magnetron sputter

High-temp RFmagnetron sputter
Manufacturer name (model)Suga (SSP3000)
Materials that can be depositedMetal
Sample sizeMaximum 2 inch × 2
temperatureRT-600 ℃
Process gasAr, N2, O2
Remarks

Thermal oxidation furnace

Thermal oxidation furnace
Manufacturer name (model)Self-made
Materials that can be depositedSiO2
Sample size⌀2 inch
Applications (features)Wet and dry oxidation of Si
Deposition temperatureAbout 1000 ℃
Main specificationsGas type: O2, H2, N2
OthersMainly for transistor gate insulating film and LOCOS process
Remarks

EB evaporator

EB evaporator
Manufacturer name (model)ANELVA (EGP-230)
Sample size□20 mm, ⌀4 inch, etc.
Applications (features)Film formation for lift-off, etc
Main specificationsFilm formation is possible with a vacuum degree 10−6 Torr. Metal film and insulating film can be formed. Titanium and aluminum are shared, but other materials are raw materials and hearth liners are prepared by each person. Magnetic materials such as nickel cannot be deposited. The film thickness can be controlled by a crystal oscillation type film thickness meter.
OthersOperation between users is prohibited for manual devices. Since the absorber inside the cryopump has a limited life, continuous operation is prohibited all night.
Remarks

Electroplating #1

Electroplating #1
Manufacturer name (model)KEITHLEY (2401 DC current)
Sample sizeDepends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories.
Application (feature)Plating mainly by direct current control.
OthersPrepare the plating solution by yourself.
Remarks

Electroplating #2

Electroplating #1
Manufacturer name (model)Hokuto Denko (HAB-151 Potential Shot)
Sample sizeDepends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories.
Applications (features)Mainly for measurement of redox potential and three-electrode plating. A device for conducting electrochemical experiments by controlling the electric potential.
OthersPrepare the plating solution by yourself. There is an accessory device for conducting experiments on nitrogen gas atmosphere.
Remarks

MBE

MBE
Manufacturer name (model)Riber (Riber MBE 32 system)
TypeMBE
Materials that can be depositedGaN, AlN, InN
Film film temperature900 ℃
Film film rate100 nm/h
Sample size⌀3 inch
Others
Remarks

Parylene evaporator

Parylene evaporator
Manufacturer name (model)Specialty Coating System (PDS2010)
Sample sizeMaximum 120 × 120 mm
UseParylene
Main specificationsFilm formation pressure: approximately 3 Pa
Deposition temperature:RT
film formation rate: 3 μm/h
Remarks

PLD

PLD
Manufacturer name (model)Pascal
Sample size□20 mm
Use (features)Deposit of oxide thin film
Remarks

ALD

ALD
Manufacturer name (model)Cambridge NanoTech (Savannah S100)
TypeThermal ALD (Atomic Layer Deposition)
Materials that can be depositedAl2O3 (TMA + H2O)
Deposition Temperature100℃–220℃
Deposition rate0.11 nm/cycle
Sample sizeMaximum ⌀4 inch
Others
Remarks

Sputter machine for Pb based complex oxide

Sputter machine for Pb based complex oxide
Manufacturer name (model)ANELVA (SPF-210H)
TypeRF magnetron sputtering
Sample sizeMaximum 2 cm□
Materials that can form a filmPZT, PMN-PT
Sample film formation temperatureMaximum 600 ℃
Deposition rate400–550 nm/h
Process gasAr, O2
RemarksTo use the equipment, you need to consult with the equipment manager of the Shuji Tanaka Laboratory.