Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesFilm formation/deposition

table of contents

Film formation/deposition

Mist coater

Mist coater

Manufacturer name (model)	Nagase Techno-Engineering (PDR-04EXP)
Sample size	Maximum 10 cm × 10 cm
Others
Remarks

ULVAC 2 inch sputter

ULVAC 2 inch sputter

Manufacturer name(Model)	ULVAC
Temperature	Maximum 500℃
ProcessGas	Ar
Sample size	⌀2 inch
Others
Remarks

Plasma-enhanced TEOS CVD

Plasma-enhanced TEOS CVD

Manufacturer name (model)	Samco (PD-100ST)
Type	PE-CVD
Materials that can be deposited	SiO₂,SiOC
Deposition temperature	80–350 ℃
Deposition rate	Approximately 80 nm/min
Sample size	Maximum 6 inch
Others
Remarks

LP-CVD

LP-CVD

Manufacturer name (model)	Tokyo Electron (MARS-II)
Type	Low-pressure CVD (LP-CVD)
Materials that can be deposited	SiO₂, SiN, Poly-Si
Deposition temperature	600℃-700℃
Deposition rate	2–10 nm/min
Sample size	⌀2 inch
Others
Remarks

Plasma-enhanced SiN CVD

Plasma-enhanced SiN CVD

Manufacturer name (model)	Samco (PD-220NL)
Type	Plasma CVD (PE-CVD)
Materials that can be deposited	SiN, SiO₂
Deposition temperature	200–350 ℃
Deposition rate	80 nm/min
Sample size	⌀2 inch
Others
Remarks

UHV-CVD

UHV-CVD

Manufacturer name (model)	Air Water (VCE-S2013TH)
Type	Ultra-high vacuum CVD (UHV-CVD)
Materials that can be deposited	Epitaxial Si
Deposition temperature	600–800 ℃
Deposition rate	2 nm/min
Sample size	⌀2 inch
Others
Remarks

SiCN Cat-CVD

SiCN Cat-CVD

Manufacturer name (model)	Self-made
Type	W Wire thermal CVD
Materials that can be deposited	SiCN (Gas source: HMDS + NH₃)
Deposition temperature	150–300 ℃
Deposition rate	2.5–50 nm/min
Sample size	⌀2 inch, □20 mm
Others	Catalyst filament: Tungsten (⌀0.5 mm), Filament temperature: 1600–1900 ℃, with heat shield
Remarks

Plasma/ozone TEOS CVD

Plasma/ozone TEOS CVD

Manufacturer name (model)	YOUTEC (21-0266SA)
Type	CVD
Materials that can be deposited	SiO₂
Deposition temperature	Approx. 300 nm/min
Deposition rate	About300nm/min
Sample size	Maximum 8 inch
Others
Remarks

Plasma CNT-CVD

Plasma CNT-CVD

Manufacturer name (Manufacturer name) Model)	Self-made
Type	PE-CVD
Materials that can be deposited	CNT
Deposition temperature	650–700 ℃ (measured by a radiation thermometer)
Deposition rate	1 nm, 2 μm/min on Fe
Sample size	Size that can be placed on a square mesh of about 50 mm
Others	Example of film formation conditions: 600 V DC plasma, acetylene 10 Pa, hydrogen 100 Pa
Remarks

Plasma diamond CVD

Plasma diamond CVD

Manufacturer name (model)	Seki Technotron (AX5200)
Type	MPECVD
Materials that can be deposited	Graphene nanowalls, diamond
Deposition temperature	RT–400 ℃
Deposition rate	Low
Sample size	10 × 10 mm
Others	Microwave power: 650 W , Gas: H₂, CH₄
Remarks

RF magnetron sputter (Shibaura) #1

RF magnetron sputter (Shibaura) #1

Manufacturer name (model)	Shibaura Mechatronics (CFS-4ES)
Materials that can be deposited	Metallic and non-metal compatible
Samples that can be introduced	Durable and particle-free sample
Sample size	Maximum 4 inch × 2
Deposition temperature	RT–300 ℃
Process gas	Ar, O₂, N₂
Other	Maximum 300 W, 3 Target can be installed
Remarks

RF magnetron sputter (Shibaura) #2

RF magnetron sputter (Shibaura) #2

Manufacturer name (model)	Shibaura Eletec (CFS-4ES-232)
Materials that can be formed	Pure metal only (other than magnetic material)
Samples that can be introduced	A sample that is resistant and does not generate particles
Sample size	Maximum 4 inch × 2
Deposition temperature	Room temperature
Process gas	Ar
Others	3 Targets can be installed
Remarks

Facing target DC sputter

Facing target DC sputter

Manufacturer name (model)	Osaka Vacuum (FTS- R3S)
Materials that can form a film	Fe, Co, Ni
Samples that can be introduced	Samples that are sputter resistant and do not generate particles
Sample size	□20 mm× 4 sheets
Sample film formation temperature	RT–400 ℃
Process gas	Ar, Kr, N₂
Other	Lift Can be turned off
Remarks

Facing target RF sputter

Facing target RF sputter

Manufacturer name (model)	Osaka Vacuum (FTS-1CL)(FTS-1CL)
Materials that can be deposited	Various metals
Sample size	□20 mm
Deposition temperature	RT–700 ° C
ProcessGas	Ar
Others	Organic material NG
Remarks

RF magnetron sputter (ULVAC)

RF magnetron sputter (ULVAC)

Manufacturer name (model)	ULVAC (MB97-0007)
Materials that can be deposited	Al, W, Ni
Sample size	⌀2 inch
Temperature	RT
Others	Organic material NG
Remarks

ECR Sputter

ECR Sputter

Manufacturer name (model)	JSW Afty (AFTEX EC-2300)
Materials that can be formed]	AlN only
Samples that can be introduced	Spatter resistant and particles that does not occur
Sample size	4 inch, □20 mm
Formation temperature	RT–300 ℃
Process gas	Ar + N₂
Others	Lift-off not possible
Remarks

ECR ion beam sputter

ECR ion beam sputter

Manufacturer name (model)	Elionix (EIS-220)
Materials that can be deposited	Semiconductors, materials for MEMS, etc.
Sample size	Maximum 3 inch
Capsulation temperature	RT–350 ℃
Process gas	Ar, N₂
Others	Organic matter OK, lift-off possible
Remarks

RF magnetron sputter (ANELVA)

RF magnetron sputter (ANELVA)

Manufacturer name (model)	Anelva (SPC-350)
Materials that can be formed	Metal, Si, SiO₂
Samples that can be introduced	Spatter resistant and generation of particles No sample
Sample size	Maximum ⌀2 inch
Deposition temperature	RT–400 ℃
Process gas	Ar, O₂, N₂
Others	Organic material NG, lift-off not possible, reactive sputtering possible, load lock chamber available, 3 Target can be installed
Remarks

High-temp RF magnetron sputter

High-temp RFmagnetron sputter

Manufacturer name (model)	Suga (SSP3000)
Materials that can be deposited	Metal
Sample size	Maximum 2 inch × 2
temperature	RT-600 ℃
Process gas	Ar, N₂, O₂
Remarks

Thermal oxidation furnace

Thermal oxidation furnace

Manufacturer name (model)	Self-made
Materials that can be deposited	SiO₂
Sample size	⌀2 inch
Applications (features)	Wet and dry oxidation of Si
Deposition temperature	About 1000 ℃
Main specifications	Gas type: O₂, H₂, N₂
Others	Mainly for transistor gate insulating film and LOCOS process
Remarks

EB evaporator

EB evaporator

Manufacturer name (model)	ANELVA (EGP-230)
Sample size	□20 mm, ⌀4 inch, etc.
Applications (features)	Film formation for lift-off, etc
Main specifications	Film formation is possible with a vacuum degree 10−6 Torr. Metal film and insulating film can be formed. Titanium and aluminum are shared, but other materials are raw materials and hearth liners are prepared by each person. Magnetic materials such as nickel cannot be deposited. The film thickness can be controlled by a crystal oscillation type film thickness meter.
Others	Operation between users is prohibited for manual devices. Since the absorber inside the cryopump has a limited life, continuous operation is prohibited all night.
Remarks

Electroplating #1

Electroplating #1

Manufacturer name (model)	KEITHLEY (2401 DC current)
Sample size	Depends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories.
Application (feature)	Plating mainly by direct current control.
Others	Prepare the plating solution by yourself.
Remarks

Electroplating #2

Electroplating #1

Manufacturer name (model)	Hokuto Denko (HAB-151 Potential Shot)
Sample size	Depends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories.
Applications (features)	Mainly for measurement of redox potential and three-electrode plating. A device for conducting electrochemical experiments by controlling the electric potential.
Others	Prepare the plating solution by yourself. There is an accessory device for conducting experiments on nitrogen gas atmosphere.
Remarks

MBE

MBE

Manufacturer name (model)	Riber (Riber MBE 32 system)
Type	MBE
Materials that can be deposited	GaN, AlN, InN
Film film temperature	900 ℃
Film film rate	100 nm/h
Sample size	⌀3 inch
Others
Remarks

Parylene evaporator

Parylene evaporator

Manufacturer name (model)	Specialty Coating System (PDS2010)
Sample size	Maximum 120 × 120 mm
Use	Parylene
Main specifications	Film formation pressure: approximately 3 Pa Deposition temperature：RT film formation rate: 3 μm/h
Remarks

PLD

PLD

Manufacturer name (model)	Pascal
Sample size	□20 mm
Use (features)	Deposit of oxide thin film
Remarks

ALD

ALD

Manufacturer name (model)	Cambridge NanoTech (Savannah S100)
Type	Thermal ALD (Atomic Layer Deposition)
Materials that can be deposited	Al₂O₃ (TMA + H₂O)
Deposition Temperature	100℃–220℃
Deposition rate	0.11 nm/cycle
Sample size	Maximum ⌀4 inch
Others
Remarks

Sputter machine for Pb based complex oxide

Sputter machine for Pb based complex oxide

Manufacturer name (model)	ANELVA (SPF-210H)
Type	RF magnetron sputtering
Sample size	Maximum 2 cm□
Materials that can form a film	PZT, PMN-PT
Sample film formation temperature	Maximum 600 ℃
Deposition rate	400–550 nm/h
Process gas	Ar, O₂
Remarks	To use the equipment, you need to consult with the equipment manager of the Shuji Tanaka Laboratory.