- table of contents
Film formation/deposition
See the Remarks section of each facilitiy regarding availability for off-campus users.
Mist coater
| Manufacturer name (model) | Nagase Techno-Engineering (PDR-04EXP) |
| Sample size | Maximum 10 cm × 10 cm |
| Others | |
| Remarks | |
ULVAC 2 inch sputter
| Manufacturer name(Model) | ULVAC |
| Temperature | Maximum 500℃ |
| ProcessGas | Ar |
| Sample size | ⌀2 inch |
| Others | |
| Remarks | |
Plasma-enhanced TEOS CVD
| Manufacturer name (model) | Samco (PD-100ST) |
| Type | PE-CVD |
| Materials that can be deposited | SiO2,SiOC |
| Deposition temperature | 80–350 ℃ |
| Deposition rate | Approximately 80 nm/min
|
| Sample size | Maximum 6 inch |
| Others | |
| Remarks | |
LP-CVD
| Manufacturer name (model) | Tokyo Electron (MARS-II) |
| Type | Low-pressure CVD (LP-CVD) |
| Materials that can be deposited | SiO2, SiN, Poly-Si |
| Deposition temperature | 600℃-700℃ |
| Deposition rate | 2–10 nm/min
|
| Sample size | ⌀2 inch |
| Others | |
| Remarks | Available for off-campus users |
Plasma-enhanced SiN CVD
| Manufacturer name (model) | Samco (PD-220NL) |
| Type | Plasma CVD (PE-CVD) |
| Materials that can be deposited | SiN, SiO2 |
| Deposition temperature | 200–350 ℃ |
| Deposition rate | 80 nm/min |
| Sample size | ⌀2 inch |
| Others | |
| Remarks | Available for off-campus users |
UHV-CVD
| Manufacturer name (model) | Air Water (VCE-S2013TH) |
| Type | Ultra-high vacuum CVD (UHV-CVD) |
| Materials that can be deposited | Epitaxial Si
|
| Deposition temperature | 600–800 ℃ |
| Deposition rate | 2 nm/min |
| Sample size | ⌀2 inch |
| Others | |
| Remarks | |
SiCN Cat-CVD
| Manufacturer name (model) | Self-made |
| Type | W Wire thermal CVD |
| Materials that can be deposited | SiCN (Gas source: HMDS + NH3) |
| Deposition temperature | 150–300 ℃ |
| Deposition rate | 2.5–50 nm/min |
| Sample size | ⌀2 inch, □20 mm |
| Others | Catalyst filament: Tungsten (⌀0.5 mm), Filament temperature: 1600–1900 ℃, with heat shield |
| Remarks | |
Plasma/ozone TEOS CVD
| Manufacturer name (model) | YOUTEC (21-0266SA) |
| Type | CVD |
| Materials that can be deposited | SiO2 |
| Deposition temperature | Approx. 300 nm/min |
| Deposition rate | About300nm/min |
| Sample size | Maximum 8 inch |
| Others | |
| Remarks | |
Plasma CNT-CVD
| Manufacturer name (Manufacturer name) Model) | Self-made |
| Type | PE-CVD |
| Materials that can be deposited | CNT |
| Deposition temperature | 650–700 ℃ (measured by a radiation thermometer) |
| Deposition rate | 1 nm, 2 μm/min on Fe |
| Sample size | Size that can be placed on a square mesh of about 50 mm |
| Others | Example of film formation conditions: 600 V DC plasma, acetylene 10 Pa, hydrogen 100 Pa |
| Remarks | |
Plasma diamond CVD
| Manufacturer name (model) | Seki Technotron (AX5200) |
| Type | MPECVD |
| Materials that can be deposited | Graphene nanowalls, diamond |
| Deposition temperature | RT–400 ℃ |
| Deposition rate | Low |
| Sample size | 10 × 10 mm
|
| Others | Microwave power: 650 W , Gas: H2, CH4 |
| Remarks | |
RF magnetron sputter (Shibaura) #1
| Manufacturer name (model) | Shibaura Mechatronics (CFS-4ES) |
| Materials that can be deposited | Metallic and non-metal compatible |
| Samples that can be introduced | Durable and particle-free sample
|
| Sample size | Maximum 4 inch × 2 |
| Deposition temperature | RT–300 ℃ |
| Process gas | Ar, O2, N2 |
| Other | Maximum 300 W, 3 Target can be installed |
| Remarks | Available for off-campus users |
RF magnetron sputter (Shibaura) #2
| Manufacturer name (model) | Shibaura Eletec (CFS-4ES-232) |
| Materials that can be formed | Pure metal only (other than magnetic material)
|
| Samples that can be introduced | A sample that is resistant and does not generate particles
|
| Sample size | Maximum 4 inch × 2 |
| Deposition temperature | Room temperature |
| Process gas | Ar |
| Others | 3 Targets can be installed |
| Remarks | |
Facing target DC sputter
| Manufacturer name (model) | Osaka Vacuum (FTS- R3S) |
| Materials that can form a film | Fe, Co, Ni |
| Samples that can be introduced | Samples that are sputter resistant and do not generate particles
|
| Sample size | □20 mm× 4 sheets |
| Sample film formation temperature | RT–400 ℃ |
| Process gas | Ar, Kr, N2 |
| Other | Lift Can be turned off |
| Remarks | |
Facing target RF sputter
| Manufacturer name (model) | Osaka Vacuum (FTS-1CL)(FTS-1CL) |
| Materials that can be deposited | Various metals |
| Sample size | □20 mm |
| Deposition temperature | RT–700 ° C |
| ProcessGas | Ar |
| Others | Organic material NG |
| Remarks | |
RF magnetron sputter (ULVAC)
| Manufacturer name (model) | ULVAC (MB97-0007) |
| Materials that can be deposited | Al, W, Ni |
| Sample size | ⌀2 inch |
| Temperature | RT |
| Others | Organic material NG |
| Remarks | Available for off-campus users |
ECR Sputter
| Manufacturer name (model) | JSW Afty (AFTEX EC-2300) |
| Materials that can be formed] | AlN only |
| Samples that can be introduced | Spatter resistant and particles that does not occur
|
| Sample size | 4 inch, □20 mm |
| Formation temperature | RT–300 ℃ |
| Process gas | Ar + N2 |
| Others | Lift-off not possible |
| Remarks | |
ECR ion beam sputter
| Manufacturer name (model) | Elionix (EIS-220) |
| Materials that can be deposited | Semiconductors, materials for MEMS, etc. |
| Sample size | Maximum 3 inch |
| Capsulation temperature | RT–350 ℃ |
| Process gas | Ar, N2 |
| Others | Organic matter OK, lift-off possible |
| Remarks | |
RF magnetron sputter (ANELVA)
| Manufacturer name (model) | Anelva (SPC-350) |
| Materials that can be formed | Metal, Si, SiO2 |
| Samples that can be introduced | Spatter resistant and generation of particles No sample
|
| Sample size | Maximum ⌀2 inch |
| Deposition temperature | RT–400 ℃ |
| Process gas | Ar, O2, N2 |
| Others | Organic material NG, lift-off not possible, reactive sputtering possible, load lock chamber available, 3 Target can be installed |
| Remarks | Available for off-campus users |
High-temp RF magnetron sputter
| Manufacturer name (model) | Suga (SSP3000) |
| Materials that can be deposited | Metal |
| Sample size | Maximum 2 inch × 2 |
| temperature | RT-600 ℃ |
| Process gas | Ar, N2, O2 |
| Remarks | |
Thermal oxidation furnace
| Manufacturer name (model) | Self-made |
| Materials that can be deposited | SiO2 |
| Sample size | ⌀2 inch |
| Applications (features) | Wet and dry oxidation of Si |
| Deposition temperature | About 1000 ℃ |
| Main specifications | Gas type: O2, H2, N2
|
| Others | Mainly for transistor gate insulating film and LOCOS process |
| Remarks | Available for off-campus users |
EB evaporator
| Manufacturer name (model) | ANELVA (EGP-230) |
| Sample size | □20 mm, ⌀4 inch, etc. |
| Applications (features) | Film formation for lift-off, etc |
| Main specifications | Film formation is possible with a vacuum degree 10−6 Torr. Metal film and insulating film can be formed. Titanium and aluminum are shared, but other materials are raw materials and hearth liners are prepared by each person. Magnetic materials such as nickel cannot be deposited. The film thickness can be controlled by a crystal oscillation type film thickness meter.
|
| Others | Operation between users is prohibited for manual devices. Since the absorber inside the cryopump has a limited life, continuous operation is prohibited all night.
|
| Remarks | |
Electroplating #1
| Manufacturer name (model) | KEITHLEY (2401 DC current) |
| Sample size | Depends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories. |
| Application (feature) | Plating mainly by direct current control. |
| Others | Prepare the plating solution by yourself. |
| Remarks | |
Electroplating #2
| Manufacturer name (model) | Hokuto Denko (HAB-151 Potential Shot) |
| Sample size | Depends on the beaker, solution tank size, and amount of plating solution to bring. 20 × 20 mm is standard for the range of accessories.
|
| Applications (features) | Mainly for measurement of redox potential and three-electrode plating. A device for conducting electrochemical experiments by controlling the electric potential.
|
| Others | Prepare the plating solution by yourself. There is an accessory device for conducting experiments on nitrogen gas atmosphere.
|
| Remarks | |
MBE
| Manufacturer name (model) | Riber (Riber MBE 32 system)
|
| Type | MBE |
| Materials that can be deposited | GaN, AlN, InN |
| Film film temperature | 900 ℃ |
| Film film rate | 100 nm/h |
| Sample size | ⌀3 inch |
| Others | |
| Remarks | |
Parylene evaporator
| Manufacturer name (model) | Specialty Coating System (PDS2010) |
| Sample size | Maximum 120 × 120 mm |
| Use | Parylene
|
| Main specifications | Film formation pressure: approximately 3 Pa
Deposition temperature：RT
film formation rate: 3 μm/h |
| Remarks | |
PLD
| Manufacturer name (model) | Pascal |
| Sample size | □20 mm |
| Use (features) | Deposit of oxide thin film |
| Remarks | |
ALD
| Manufacturer name (model) | Cambridge NanoTech (Savannah S100) |
| Type | Thermal ALD (Atomic Layer Deposition) |
| Materials that can be deposited | Al2O3 (TMA + H2O) |
| Deposition Temperature | 100℃–220℃ |
| Deposition rate | 0.11 nm/cycle |
| Sample size | Maximum ⌀4 inch |
| Others | |
| Remarks | |
Sputter machine for Pb based complex oxide
| Manufacturer name (model) | ANELVA (SPF-210H) |
| Type | RF magnetron sputtering |
| Sample size | Maximum 2 cm□ |
| Materials that can form a film | PZT, PMN-PT |
| Sample film formation temperature | Maximum 600 ℃ |
| Deposition rate | 400–550 nm/h |
| Process gas | Ar, O2 |
| Remarks | To use the equipment, you need to consult with the equipment manager of the Shuji Tanaka Laboratory. |
Tohoku University
