Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesFilm processing/etching

table of contents

Film processing/etching

See the Remarks section of each facilitiy regarding availability for off-campus users.

Asher for general use

Asher for general use

Manufacturer name (model)	Self-made
Sample size	Maximum 4 inch
Process gas	CF4, O₂
Others
Remarks

ICP-RIE #1

ICP-RIE #1

Manufacturer name (model)	SPP Technologies (MUC21)
Application	Gate electrode formation
Process gas	SF₆, C₄F₈, HBr, Cl₂, Ar, O₂
Materials that can be introduced	Si, SiO₂, resist
Sample size	Maximum ⌀2 inch
Etching rate	150 nm/min (Poly-Si)
Selection ratio	10
Others (plasmaExcitation method, power supply output, etc.)	Plasma excitation method: induction coupling type
Remarks	Available for off-campus users

ICP-RIE #2

ICP-RIE #2

Manufacturer name (model)	Sumitomo Precision Products (MUC-21 ASE-SRE)
Use	High aspect ratio Si etching
Process gas	SF₆, C₄F₈, O₂
Materials that can be introduced	Si, SiO₂, positive resist
Sample size	Maximum ⌀4 inch
Etching rate	1.5–7.5 μm/min (Si)
Selection ratio	50–250 (photoresist)
Others (plasma excitation method, power output, etc.)	Plasma excitation method: induction coupling type, ICP power: maximum 1000 W, bias power: maximum 100 W
Remarks

ICP-RIE #3

ICP-RIE #3

Manufacturer name (model) )	ANELVA (L-201D-L)
Use	Al, W, SiO₂ cleavage
Process gas	BCl₃, Cl₂, O₂, Ar, H₂, CF₄
Induction materials	Al, W, Si, SiO₂, resist
Sample size	⌀2 inch
Etching rate	100 nm/min (SiO₂)
Selection ratio	1:5
Others (plasma excitation method, power supply output, etc.)	Plasma excitation method: CCP
Remarks

FAB

FAB

Manufacturer name (model)	Ebara (FAB-60 ML type)
Use	High-precision vertical machining with high-speed atomic rays
Process gas	SF₆, O₂, CHF₃
Materials that can be introduced	Metal, Si, etc.
サSample size	□20 mm
Etching rate	34 nm/min (Si)
Selection ratio	1:1.5 (photoresist)
Remarks	Available for off-campus users

CCP-RIE #1

CCP-RIE #1

Manufacturer name(Model)	ANELVA (L-201D-L)
Use	Metal and dielectric material photoresist
Process gas	SF₆, CF₄, Ar, O₂, CHF₃
Workable materials	No limitation
Sample size	Maximum ⌀3 inch
Etching rate	70 nm/min (SiO₂), 10 nm/min (Pt)
Selection ratio	1:2–3 (photoresist: SiO₂)
Others (plasma excitation method, power supply output, etc.)	Plasma excitation Method: CCP (parallel flat plate)
Remarks	Available for off-campus users

CCP-RIE #2

CCP-RIE #2

Manufacturer name (model)	ANELVA (L-201D-L)
Application	Sample etching of semiconductors, Plasma, etc.
Process gas	Ar, N₂, O₂, Cl₂, BCl₃
Materials that can be introduced	Samples of semiconductors, Plasma, etc.
Sample size	3 inch
Others	RF < 100 W
Remarks	Available for off-campus users

CCP-RIE #3

CCP-RIE#3

Manufacturer name (model)	ANELVA (L-201D-L)
Use	Al, W, SiO₂ cleavage
Process gas	BCl3, Cl₂, O₂, Ar, H₂, CF₄
Induction materials	Al, W, Si, SiO₂, resist
Sample size	⌀2 inch
Etching rate	100 nm/min (SiO₂)
Selection ratio	1:5
Others (plasma excitation method, power supply output, etc.)	Plasma excitation method: CCP
Remarks	Available for off-campus users

Ion beam milling

Ion beam milling

Manufacturer name (model)	Hakuto Co., Ltd. (IBE-KDC 75)
Application	Microfabrication of materials (Pt, etc.) that cannot be handled by RIE equipment
Microfabrication of materials (Pt, etc.) that cannot be handled by RIE equipment	Ar
Sample size	20 mm, 3 inch, 4 inch
Materials that can be introduced	Other than harmful substances (Pb, As, etc.), other than low vapor pressure substances (Zn, etc.)
Etching rate	Pt 30 nm/min
Others (plasma excitation method, power supply output, etc.)	Kaufman type plasma generator
Remarks

Dual frequency RIE

Dual frequency RIE

Manufacturer name (model)	ANELVA (L-211D)
Use	For source / drain contact etching
Process gas	C₄F₈, Ar, O₂
SampleSize	⌀2 inch
Workable material	Si substrate
Etching rate	300 nm/min
Selection ratio	1:10
Others (plasma excitation method, power supply output, etc.)	Dual frequency excitation
Remarks	Available for off-campus users

SiN etcher

SiN etcher

Manufacturer name (Manufacturer name) Model)	Samco (RIE-10NR)
Use	For SiN etching of LOCOS
Process gas	CF₄, H₂, O₂, SF₆
Sample size	⌀2 inch
Workable material	Si substrate
Etching rate	100 nm/min
Selection ratio	1:10
Others (plasma excitation method, power supply output, etc.)	Parallel plate type
Remarks	Available for off-campus users

O₂ asher

O2 asher

Manufacturer name (model)	Mori Engineering (SFA-600)
Use	Resist removal
Process gas	O₂
Materials that can be introduced	Si substrate
Sample size	⌀2 inch
Etching rate	200 nm/min
Selection ratio	Unknown
Others (plasma excitation method, power supply output, etc.)	Downflow type
Remarks

Magnetic ICP-RIE

Magnetic ICP-RIE

Manufacturer name (model)	ULVAC (NE-550)
Use	Al wiring formation
Process gas	Cl₂, BCl₃, O₂, CF₄, SF₆
Workable materials	Si substrate
Sample size	⌀2 inch
Etching rate	300 nm/min
Selection ratio	Unknown
Others (plasma excitation method, power supply output, etc.)	Inducing magnetic field ICP
Remarks	Available for off-campus users

Isotropic Si etcher

Isotropic Si etcher

Manufacturer name (model)	Self-made
Applications	Si selective etching
Process gas	XeF2
Workable materials	Si, SiO₂, positive resist, metal
Sample size	□20 mm
Etching rate	Varies depending on the area of the material to be processed
Selection ratio	10000 (SiO₂)
Remarks	Available for off-campus users

YAG laser

YAG laser

Manufacturer name (model)	NEC (Nd:YAG Laser SL 115G)
Features/Applications	Dry Process & local processing, separation of manufactured devices, cutting of stainless steel, SMA, etc. and selective removal of coatings on welded metal wires, PZT laser-assisted etching
Laser specifications (oscillator, wavelength, output, etc.)	Nd:YAG laser (Q switch used, wavelength: 1064 nm, output: 100 W)
Processing size	50 × 50 mm
Processing object	Silicon, glass, stainless steel, SMA, PZT, etc. (Consultation required)
Other	Processing accuracy: 30–approximately 40 μm, current range: 24–26 A (silicon), 40–42 A (glass)
Remarks	Available for off-campus users