Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesFilm processing/etching

table of contents

Film processing/etching

Asher for general use

Asher for general use
Manufacturer name (model)Self-made
Sample sizeMaximum 4 inch
Process gasCF4, O2
Others
Remarks

ICP-RIE #1

ICP-RIE #1
Manufacturer name (model)SPP Technologies (MUC21)
ApplicationGate electrode formation
Process gasSF6, C4F8, HBr, Cl2, Ar, O2
Materials that can be introducedSi, SiO2, resist
Sample sizeMaximum ⌀2 inch
Etching rate150 nm/min (Poly-Si)
Selection ratio10
Others (plasmaExcitation method, power supply output, etc.)Plasma excitation method: induction coupling type
Remarks

ICP-RIE #2

ICP-RIE #2
Manufacturer name (model)Sumitomo Precision Products (MUC-21 ASE-SRE)
UseHigh aspect ratio Si etching
Process gasSF6, C4F8, O2
Materials that can be introducedSi, SiO2, positive resist
Sample sizeMaximum ⌀4 inch
Etching rate1.5–7.5 μm/min (Si)
Selection ratio50–250 (photoresist)
Others (plasma excitation method, power output, etc.)Plasma excitation method: induction coupling type, ICP power: maximum 1000 W, bias power: maximum 100 W
Remarks

ICP-RIE #3

ICP-RIE #3
Manufacturer name (model) )ANELVA (L-201D-L)
UseAl, W, SiO2 cleavage
Process gasBCl3, Cl2, O2, Ar, H2, CF4
Induction materialsAl, W, Si, SiO2, resist
Sample size⌀2 inch
Etching rate100 nm/min (SiO2)
Selection ratio1:5
Others (plasma excitation method, power supply output, etc.)Plasma excitation method: CCP
Remarks

FAB

FAB
Manufacturer name (model)Ebara (FAB-60 ML type)
UseHigh-precision vertical machining with high-speed atomic rays
Process gasSF6, O2, CHF3
Materials that can be introducedMetal, Si, etc.
サSample size□20 mm
Etching rate34 nm/min (Si)
Selection ratio1:1.5 (photoresist)
Remarks

CCP-RIE #1

CCP-RIE #1
Manufacturer name(Model)ANELVA (L-201D-L)
UseMetal and dielectric material photoresist
Process gasSF6, CF4, Ar, O2, CHF3
Workable materialsNo limitation
Sample sizeMaximum ⌀3 inch
Etching rate70 nm/min (SiO2), 10 nm/min (Pt)
Selection ratio1:2–3 (photoresist: SiO2)
Others (plasma excitation method, power supply output, etc.)Plasma excitation Method: CCP (parallel flat plate)
Remarks

CCP-RIE #2

CCP-RIE #2
Manufacturer name (model)ANELVA (L-201D-L)
ApplicationSample etching of semiconductors, Plasma, etc.
Process gasAr, N2, O2, Cl2, BCl3
Materials that can be introducedSamples of semiconductors, Plasma, etc.
Sample size3 inch
OthersRF < 100 W
Remarks

CCP-RIE #3

CCP-RIE#3
Manufacturer name (model)ANELVA (L-201D-L)
UseAl, W, SiO2 cleavage
Process gasBCl3, Cl2, O2, Ar, H2, CF4
Induction materials Al, W, Si, SiO2, resist
Sample size⌀2 inch
Etching rate100 nm/min (SiO2)
Selection ratio1:5
Others (plasma excitation method, power supply output, etc.)Plasma excitation method: CCP
Remarks

Ion beam milling

Ion beam milling
Manufacturer name (model)Hakuto Co., Ltd. (IBE-KDC 75)
ApplicationMicrofabrication of materials (Pt, etc.) that cannot be handled by RIE equipment
Microfabrication of materials (Pt, etc.) that cannot be handled by RIE equipment Ar
Sample size20 mm, 3 inch, 4 inch
Materials that can be introducedOther than harmful substances (Pb, As, etc.), other than low vapor pressure substances (Zn, etc.)
Etching ratePt 30 nm/min
Others (plasma excitation method, power supply output, etc.)Kaufman type plasma generator
Remarks

Dual frequency RIE

Dual frequency RIE
Manufacturer name (model)ANELVA (L-211D)
UseFor source / drain contact etching
Process gasC4F8, Ar, O2
SampleSize⌀2 inch
Workable materialSi substrate
Etching rate300 nm/min
Selection ratio1:10
Others (plasma excitation method, power supply output, etc.)Dual frequency excitation
Remarks

SiN etcher

SiN etcher
Manufacturer name (Manufacturer name) Model)Samco (RIE-10NR)
UseFor SiN etching of LOCOS
Process gasCF4, H2, O2, SF6
Sample size⌀2 inch
Workable materialSi substrate
Etching rate100 nm/min
Selection ratio 1:10
Others (plasma excitation method, power supply output, etc.)Parallel plate type
Remarks

O2 asher

O2 asher
Manufacturer name (model)Mori Engineering (SFA-600)
UseResist removal
Process gasO2
Materials that can be introducedSi substrate
Sample size⌀2 inch
Etching rate200 nm/min
Selection ratioUnknown
Others (plasma excitation method, power supply output, etc.)Downflow type
Remarks

Magnetic ICP-RIE

Magnetic ICP-RIE
Manufacturer name (model)ULVAC (NE-550)
UseAl wiring formation
Process gasCl2, BCl3, O2, CF4, SF6
Workable materialsSi substrate
Sample size⌀2 inch
Etching rate300 nm/min
Selection ratioUnknown
Others (plasma excitation method, power supply output, etc.)Inducing magnetic field ICP
Remarks

Isotropic Si etcher

Isotropic Si etcher
Manufacturer name (model)Self-made
ApplicationsSi selective etching
Process gasXeF2
Workable materialsSi, SiO2, positive resist, metal
Sample size□20 mm
Etching rateVaries depending on the area of ​​the material to be processed
Selection ratio10000 (SiO2)
Remarks

YAG laser

YAG laser
Manufacturer name (model)NEC (Nd:YAG Laser SL 115G)
Features/ApplicationsDry Process & local processing, separation of manufactured devices, cutting of stainless steel, SMA, etc. and selective removal of coatings on welded metal wires, PZT laser-assisted etching
Laser specifications (oscillator, wavelength, output, etc.)Nd:YAG laser (Q switch used, wavelength: 1064 nm, output: 100 W)
Processing size50 × 50 mm
Processing objectSilicon, glass, stainless steel, SMA, PZT, etc. (Consultation required)
OtherProcessing accuracy: 30–approximately 40 μm, current range: 24–26 A (silicon), 40–42 A (glass)
Remarks