- table of contents
Shape/morphology observation, analysis
See the Remarks section of each facilitiy regarding availability for off-campus users.
Thermal Decomposition Spectroscopy, TDS
| Manufacturer name (model) | ESCO (WA1000) |
| Use | Temperature rise desorption gas analysis on silicon or glass substrates |
| pplication example | Amount of H2O adsorbed on SiO2 and desorption temperature analysis, Amount of H+ adsorbed on Si and desorption temperature analysis |
| Sample size | 1 × 1 cm |
| Others | No organic materials accepted, no organically contaminated samples accepted |
| Remarks | Contamination control is required. Consult with the person in charge of equipment management (Shuji Tanaka Laboratory) before use. |
TG/DTA
| Manufacturer name (model) | SII (TG/DTA7300) |
| Sample size | Maximum sample volume 200mg or the amount that can be contained in the container |
| Others | Measuring temperature range: RT to 1500℃, TG measuring range: ±400 mg, TG sensitivity: 0.2 μg, DTA measuring range: ±1000 μV, DTA sensitivity: 0.06 μV |
| Remarks | |
FE-SEM
| Manufacturer name (model) | JEOL (JSM-7400F) |
| Application | Sample observation by electron beam (SEM) |
| Sample size | Maximum ⌀2 inch |
| Application example | Cross-sectional observation of prototype transistor
|
| Main specifications | Maximum acceleration Pressure: 30 kV, Resolution: 1.0 nm
|
| Others | Reflected electron image, EDX (Si(Li)) observation is also possible |
| Remarks | |
High resolution SEM
| Manufacturer name (model) | SEM: Hitachi High-Tech (SU-70), EDX: Oxford (AZtec Energy X-Max)
|
| Application | Observation of fine structure of sample
|
| Sample size | Maximum ⌀6 inch
|
| Application example | Observation of fine shape on the order of nm, element analysis by EDX
|
| Main specifications | Electron gun: ZrO/W Shotkey emission type electron gun, acceleration voltage: 0.5–30 kV
|
| Remarks | Available for off-campus users |
Thermal electron SEM
| Manufacturer name (model) | Hitachi High Technologies (S-2250N)
|
| Application | Low vacuum compatible, thermo electron scanning electron microscopy |
| Sample size | Maximum ⌀150 mm |
| Application example | Low vacuum observation is possible. Observation is possible even for samples that have not been pretreated such as dehydration and drying. SEM observation while flowing a solution through a MEMS microchannel with a thin film window, SEM observation of a moving MEMS switch using a current introduction terminal, etc.
|
| Main specifications | Acceleration voltage: 0.5–25 kV
Magnification: 20–200,000 times
Vacuum degree: high vacuum mode (< 10−4 Pa), low vacuum mode (1.3–266 Pa)
|
| Remarks | |
Wafer bonding inspector
| Manufacturer name (model)） | Moritex (IRise) |
| Use | Internal inspection of sample |
| Sample size | Maximum ⌀8 inch |
| Application example | Evaluation of joint interface of joint sample |
| Evaluation of joint interface of joint sample | Monitor magnification: 33–1760 times |
| Other | The entire wafer can be evaluated collectively by combining images.
|
| Remarks | |
XPS
| Manufacturer name (model) | ULVAC PHI (ESCA1600)
|
| Use | Element analysis of sample surface |
| Sample size | Maximum ⌀2 inch |
| Application example | Sample surface composition analysis, chemical bond state evaluation
|
| Main specifications | X-ray source: Mg, Al (not monochrome)
|
| Others | Depth direction analysis possible by Ar etching, Auger electron spectroscopy Measurement |
| Remarks | |
Refractive index meter
| Manufacturer name (model) | Metricon (model 2010) |
| Use | It is possible to evaluate transparent or translucent materials. Simultaneous measurement of refractive index and film thickness value is possible.
|
| Sample size | □20 mm |
| Main specifications | Prism coupling type, refractive index accuracy: ± 0.001, film thickness accuracy: ± (0.5 % ± 50 A), refractive index resolution: ± 0.0003, film thickness resolution: ± 0.3 %
|
| Remarks | |
Stylus profilometer
| Manufacturer name (model) | Kosaka Laboratory (ET200) |
| Application | Sample surface shape measurement (line analysis)
|
| Sample size | ⌀160 mm × Thickness 48 mm
|
| Application example | Si after etching Wafer shape measurement |
| Main specifications | Height resolution: 0.1 nm, Lateral resolution: 0.1 μm
|
| Remarks | |
Ellipsometer
| Manufacturer name (model) | HORIBA JOBIN YVON (UVISEL-LT)
|
| Use | Film thickness analysis, optical constants (n, k) analysis, in-plane distribution measurement
|
| Sample size | Maximum ⌀8 inch
|
| Application example | Measuring the film thickness and refractive index of the |
| Main specifications | Wavelength: 260–2100 nm, [Light source] Xe lamp (75 W)
|
| Other | Supports wavelengths from ultraviolet to near infrared. Automatic in-plane distribution measurement with an electric stage.
|
| Remarks | Available for off-campus users |
Ultraviolet spectroscopic ellipsometer
| Manufacturer name (model) | J.A. Woollam (M-2000D)
|
| Use | Measurement of thin film thickness and optical constant |
| Sample size | Maximum □5 inch |
| Application example | Measurement of film thickness of |
| Main specifications | Measurement wavelength range: 193–1000 nm |
| Remarks | |
FT-IR
| Manufacturer name (model) | Japan Spectroscopy (main unit: FT / IR-6300, microscopic part: IRT-7000)
|
| Application | Infrared spectroscopic measurement of sample |
| Sample size | ⌀4 inch (depending on the measurement method)
|
| Application example | Film quality analysis of thin film
|
| Main specifications | Transmission, reflection, ATR, RAS, measurement in vacuum state, microscopic measurement possible
|
| Remarks | |
UV/Vis/IR spectrometer
| Manufacturer name (model) | Jasco (V-570) |
| Use | Measurement of sample absorbance |
| Sample size | Maximum ⌀2 inch
|
| Application example | Measurement of absorbance of thin film |
| Main Specifications | Measurement wavelength range: 190–2500 nm, target sample: solid, liquid, measurement method: transmission measurement, reflection measurement
|
| Remarks | |
PL measurement system
| Manufacturer name (model) | Self-made
|
| Use | PL measurement
|
| Sample size | 15 × 10 mm |
| Application example | GaNのGaN emission spectrum measurement |
| Main specifications | Excitation light wavelength: 325 nm, Excitation light intensity: 200 mW
|
| Others | Cooling PL measurement (about 8 K) is possible. |
| Remarks | |
XRD
| Manufacturer name (model) | Bruker (D8 ADVANCE) |
| Application | Sample crystal structure evaluation, θ/2θ measurement, Rocking curve measurement, pole diagram measurement, residual stress measurement, etc. |
| Sample size | Maximum ⌀2 inch |
| Main specifications | Two-dimensional X-ray diffraction pattern can be acquired by a two-dimensional detector.
|
| Remarks | |
Olympus SPM
| Manufacturer name (model) | Olympus (NV-2000)
|
| Application | Acquisition of surface shape image and conductive image of minute area
|
| Sample size | ⌀20 mm or less is recommended
|
| Application example | Observation of the metal film surface. |
| Others | Data is retrieved using an MO drive, and files are also in a special format.
|
| Remarks | |
Shimazu SPM
| Manufacturer name (model) | Shimadzu Corporation (SPM9500-J2) |
| Use (features) | Acquisition of surface shape images and conductive images of minute regions
|
| Sample size | Within ⌀15 mm |
| Application example | Observation of the metal film surface. |
| Others | The operation is unstable because the control board is out of order and cannot be repaired. |
| Remarks | |
UHV-STM & AFM
| Manufacturer name (model) | JEOL (JSTM-4500XT) |
| Application | Surface shape measurement |
| Sample size | About 2 × 5 mm
|
| Application example | Measurement with atomic resolution （STM） |
| Others | The operation of the device requires considerable knowledge and training. |
| Remarks | |
Tohoku University
