Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesShape/morphology observation, analysis

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Shape/morphology observation, analysis

Thermal Decomposition Spectroscopy, TDS

Thermal Decomposition Spectroscopy, TDS

Manufacturer name (model)	ESCO (WA1000)
Use	Temperature rise desorption gas analysis on silicon or glass substrates
pplication example	Amount of H₂O adsorbed on SiO₂ and desorption temperature analysis, Amount of H+ adsorbed on Si and desorption temperature analysis
Sample size	1 × 1 cm
Others	No organic materials accepted, no organically contaminated samples accepted
Remarks	Contamination control is required. Consult with the person in charge of equipment management (Shuji Tanaka Laboratory) before use.

TG/DTA

TG/DTA

Manufacturer name (model)	SII (TG/DTA7300)
Sample size	Maximum sample volume 200mg or the amount that can be contained in the container
Others	Measuring temperature range: RT to 1500℃, TG measuring range: ±400 mg, TG sensitivity: 0.2 μg, DTA measuring range: ±1000 μV, DTA sensitivity: 0.06 μV
Remarks

FE-SEM

FE-SEM

Manufacturer name (model)	JEOL (JSM-7400F)
Application	Sample observation by electron beam (SEM)
Sample size	Maximum ⌀2 inch
Application example	Cross-sectional observation of prototype transistor
Main specifications	Maximum acceleration Pressure: 30 kV, Resolution: 1.0 nm
Others	Reflected electron image, EDX (Si(Li)) observation is also possible
Remarks

High resolution SEM

High resolution SEM

Manufacturer name (model)	SEM: Hitachi High-Tech (SU-70), EDX: Oxford (AZtec Energy X-Max)
Application	Observation of fine structure of sample
Sample size	Maximum ⌀6 inch
Application example	Observation of fine shape on the order of nm, element analysis by EDX
Main specifications	Electron gun: ZrO/W Shotkey emission type electron gun, acceleration voltage: 0.5–30 kV
Remarks

Thermal electron SEM

Thermal electron SEM

Manufacturer name (model)	Hitachi High Technologies (S-2250N)
Application	Low vacuum compatible, thermo electron scanning electron microscopy
Sample size	Maximum ⌀150 mm
Application example	Low vacuum observation is possible. Observation is possible even for samples that have not been pretreated such as dehydration and drying. SEM observation while flowing a solution through a MEMS microchannel with a thin film window, SEM observation of a moving MEMS switch using a current introduction terminal, etc.
Main specifications	Acceleration voltage: 0.5–25 kV Magnification: 20–200,000 times Vacuum degree: high vacuum mode (< 10⁻⁴ Pa), low vacuum mode (1.3–266 Pa)
Remarks

Wafer bonding inspector

Wafer bonding inspector

Manufacturer name (model)）	Moritex (IRise)
Use	Internal inspection of sample
Sample size	Maximum ⌀8 inch
Application example	Evaluation of joint interface of joint sample
Evaluation of joint interface of joint sample	Monitor magnification: 33–1760 times
Other	The entire wafer can be evaluated collectively by combining images.
Remarks

XPS

XPS

Manufacturer name (model)	ULVAC PHI (ESCA1600)
Use	Element analysis of sample surface
Sample size	Maximum ⌀2 inch
Application example	Sample surface composition analysis, chemical bond state evaluation
Main specifications	X-ray source: Mg, Al (not monochrome)
Others	Depth direction analysis possible by Ar etching, Auger electron spectroscopy Measurement
Remarks

Refractive index meter

Refractive index meter

Manufacturer name (model)	Metricon (model 2010)
Use	It is possible to evaluate transparent or translucent materials. Simultaneous measurement of refractive index and film thickness value is possible.
Sample size	□20 mm
Main specifications	Prism coupling type, refractive index accuracy: ± 0.001, film thickness accuracy: ± (0.5 % ± 50 A), refractive index resolution: ± 0.0003, film thickness resolution: ± 0.3 %
Remarks

Stylus profilometer

Stylus profilometer

Manufacturer name (model)	Kosaka Laboratory (ET200)
Application	Sample surface shape measurement (line analysis)
Sample size	⌀160 mm × Thickness 48 mm
Application example	Si after etching Wafer shape measurement
Main specifications	Height resolution: 0.1 nm, Lateral resolution: 0.1 μm
Remarks

Ellipsometer

Ellipsometer

Manufacturer name (model)	HORIBA JOBIN YVON (UVISEL-LT)
Use	Film thickness analysis, optical constants (n, k) analysis, in-plane distribution measurement
Sample size	Maximum ⌀8 inch
Application example	Measuring the film thickness and refractive index of the
Main specifications	Wavelength: 260–2100 nm, [Light source] Xe lamp (75 W)
Other	Supports wavelengths from ultraviolet to near infrared. Automatic in-plane distribution measurement with an electric stage.
Remarks

Ultraviolet spectroscopic ellipsometer

Ultraviolet spectroscopic ellipsometer

Manufacturer name (model)	J.A. Woollam (M-2000D)
Use	Measurement of thin film thickness and optical constant
Sample size	Maximum □5 inch
Application example	Measurement of film thickness of
Main specifications	Measurement wavelength range: 193–1000 nm
Remarks

FT-IR

FT-IR

Manufacturer name (model)	Japan Spectroscopy (main unit: FT / IR-6300, microscopic part: IRT-7000)
Application	Infrared spectroscopic measurement of sample
Sample size	⌀4 inch (depending on the measurement method)
Application example	Film quality analysis of thin film
Main specifications	Transmission, reflection, ATR, RAS, measurement in vacuum state, microscopic measurement possible
Remarks

UV/Vis/IR spectrometer

UV/Vis/IR spectrometer

Manufacturer name (model)	Jasco (V-570)
Use	Measurement of sample absorbance
Sample size	Maximum ⌀2 inch
Application example	Measurement of absorbance of thin film
Main Specifications	Measurement wavelength range: 190–2500 nm, target sample: solid, liquid, measurement method: transmission measurement, reflection measurement
Remarks

PL measurement system

PL measurement system

Manufacturer name (model)	Self-made
Use	PL measurement
Sample size	15 × 10 mm
Application example	GaNのGaN emission spectrum measurement
Main specifications	Excitation light wavelength: 325 nm, Excitation light intensity: 200 mW
Others	Cooling PL measurement (about 8 K) is possible.
Remarks

XRD

XRD

Manufacturer name (model)	Bruker (D8 ADVANCE)
Application	Sample crystal structure evaluation, θ/2θ measurement, Rocking curve measurement, pole diagram measurement, residual stress measurement, etc.
Sample size	Maximum ⌀2 inch
Main specifications	Two-dimensional X-ray diffraction pattern can be acquired by a two-dimensional detector.
Remarks

Olympus SPM

Olympus SPM

Manufacturer name (model)	Olympus (NV-2000)
Application	Acquisition of surface shape image and conductive image of minute area
Sample size	⌀20 mm or less is recommended
Application example	Observation of the metal film surface.
Others	Data is retrieved using an MO drive, and files are also in a special format.
Remarks

Shimazu SPM

Shimazu SPM

Manufacturer name (model)	Shimadzu Corporation (SPM9500-J2)
Use (features)	Acquisition of surface shape images and conductive images of minute regions
Sample size	Within ⌀15 mm
Application example	Observation of the metal film surface.
Others	The operation is unstable because the control board is out of order and cannot be repaired.
Remarks

UHV-STM & AFM

UHV-STM & AFM

Manufacturer name (model)	JEOL (JSTM-4500XT)
Application	Surface shape measurement
Sample size	About 2 × 5 mm
Application example	Measurement with atomic resolution （STM）
Others	The operation of the device requires considerable knowledge and training.
Remarks