Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesBonding, polishing, packaging

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Bonding, polishing, packaging

EVG wafer bonder（EV520)

EVG wafer bonder（EV520)
Manufacturer name (model)EV Group (EVG520)
Maximum sample size4 inch
Maximum generated force (load)3500 N
Maximum temperature550 ℃
Chamber vacuum degree10−2 Pa
Maximum applied voltage1200 V
OthersBond alignment is possible with the EVG mask aligner installed in this facility
Remarks

Wafer bonder (Technofine)

Wafer bonder (Technofine)
Manufacturer name (model)Technofine (SG-560)
Maximum sample size4 inch
Maximum generated force (load)10000 N
Maximum temperature350 ℃
Chamber vacuum5 x 10−3 Pa
Maximum applied voltageNot compatible
Remarks

Flip chip bonder #1

Flip chip bonder #1
Manufacturer name (model)Kan Electronics (MODEL6000)
Maximum sample size□20 mm
Maximum generated force (load)5 kgf (49 N)
Maximum temperature200 ℃
Chamber vacuum degreeAtmospheric pressure (N2 gas flow possible)
Maximum applied voltageNo voltage applied
Remarks

Flip chip bonder#2(M-90-10)

Flip chip bonder#2(M-90-10)
Manufacturer name (model)HiSOL (M-90)
Maximum sample sizeTop: □10 mm, bottom (Stage): 4 inch
Maximum generated force (load) 5.5 N
Maximum temperature350 ℃
Chamber vacuumAtmospheric pressure
Maximum applied voltageVoltage cannot be applied
Remarks

EVG plasma activator

EVG plasma activator
Manufacturer name (manufacturer name) Model)EV Group (EVG810)
Maximum sample size6 inch
Chamber vacuumAbout 1 Pa
OthersApplications for sample surface plasma treatment for low-temperature direct bonding
Remarks

Megasonic Cleaner

Megasonic Cleaner
Manufacturer name (model) EV Group (EVG301)
Maximum sample size6 inch
OthersApplications for megasonic cleaning of the sample surface before treatment with the EVG plasma surface activation device, sample cleaning with a brush is possible
Remarks

Laser dicer

Laser dicer
Manufacturer name ( Model)Self-made
Features / ApplicationsStealth dicing using laser
Laser specifications (oscillator, wavelength, output, etc.)Pulse fiber laser (manufactured by SPI Lasers, wavelength: 1064 nm, output: 12 W), pulse green laser (manufactured by Megaopto, wavelength: 532 nm, output: > 1.2 W (1 kHz), > 3.5 W (10 kHz))
Processing SizeMaximum 25 × 25 mm
Processing objectSilicon, Tempax, etc. (Consultation required)
OthersA crack layer is formed inside the sample (Si, etc.). Chips cannot be made by laser dicing alone, and external bending stress is required.
Remarks

Dicer

Dicer
Manufacturer name (model)DISCO (DAD3240)
UseCutting wafers (Si, glass, crystal, lithium niobate, etc.)
Sample sizeMaximum ⌀152.4 mm
OthersMust be pasted on dicing tape, etc.
Remarks

Polishing machine(1PM52)

Polishing machine(1PM52)
Manufacturer name (model)Logistech (PM5)
UsePolishing of wafers
Sample sizeMaximum ⌀4 inch
Others
Remarks

Grinding machine(NVG-200A)

Grinding machine(NVG-200A)
Manufacturer name (model)Nanofactor (NVG-200A)
ApplicationGrinding of samples
Main specificationsRotation speed: 100–600 rpm, Machining accuracy: 10 μm
Sample size100 mm, Height: 20 mm
Remarks

Wafer Bonder (EVG540)

Wafer Bonder (EVG540)
Manufacturer name (model)EVG540
ApplicationWafer bonding
Sample size8-inch or 12-inch wafers
Maximum generated force (load)60000N
Maximum temperature550℃
Chamber vacuum degree1E-06 mbar
Maximum applied voltage3φ200V，100A
Others12-inch wafer / Maximal temperature at 550°C : 27.1kW
Remarks

Wafer Aligner (EVG SmartView NT)

Wafer Aligner (EVG SmartView NT)
Manufacturer name (model)EVG SmartViewNT
ApplicationWafer aligner
Sample size8-inch or 12-inch wafers
Maximum applied voltage1φ200V，16A
Others
Remarks

Plasma cleaner (AQ-500T)

Plasma cleaner (AQ-500T)
Manufacturer name (model)AQ-500T
ApplicationPlasma activation
Sample sizeWithin 8 inches square
Chamber vacuum degree5Pa
Maximum applied voltageUp to 300W
OthersPlasma source H2O，Ar，O2，N2
Remarks

Plasma cleaner (ONTOS)

Plasma cleaner (ONTOS)
Manufacturer name (model)OntosTT Stand Alone Atmospheric Plasma Systems
ApplicationSurface activation of semiconductor chips and wafers
Sample sizeFrom 5mm square chips to 12-inch wafers.
Substrate thickness up to 20mm.
Chamber vacuum degreeAtmospheric pressure plasma
Maximum applied voltage13.56MHz, up to 200W
(Input 1φ 100V, 10A)
OthersPlasma source Ar/H2（95/5），Ar，O2，N2
Computer-controlled moving X-Y-Z stage for plasma treatment of die or wafer
Remarks

Flip chip bonder(FC3000W)

Flip chip bonder(FC3000W)
Manufacturer name (model)Toray Engineering Co.,Ltd.(FC3000W)
ApplicationFlip-chip bonding
Sample size(tip)Minimum: 3L × 3W
Maximum: 20L × 20W
Sample size(substrate)8-inch, 12-inch wafer
Maximum generated force (load)Ultra-low pressure head: 0.098 to 9.8N
Thermal bonding head: 9.8 to 490N
Maximum temperature(head)Room temp. to 450℃
Maximum temperature(constant stage)Room temp. to 150℃
＊Maximum heating area: 12-inch wafer
Maximum temperature(pulse stage)Room temp. to 400℃
＊Maximum heating area: 20 mm□
Others
Remarks

Anodic bonding

Anodic bonding
Manufacturer name (model)NEC
ApplicationAnodic bonding
Sample size4inch
OthersWafer to wafer bonding
Remarks