Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesCutting, polishing, bonding

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Cutting, polishing, bonding

EVG Wafer bonder

EVG Wafer bonder
Manufacturer name (model)EV Group (EVG520)
Maximum sample size4 inch
Maximum generated force (load)3500 N
Maximum temperature550 ℃
Chamber vacuum degree10−2 Pa
Maximum applied voltage1200 V
OthersBond alignment is possible with the EVG mask aligner installed in this facility
Remarks

Wafer bonder (Technofine)

Wafer bonder (Technofine)
Manufacturer name (model)Technofine (SG-560)
Maximum sample size4 inch
Maximum generated force (load)10000 N
Maximum temperature350 ℃
Chamber vacuum5 x 10−3 Pa
Maximum applied voltageNot compatible
Remarks

Flip chip bonder #1

Flip chip bonder #1
Manufacturer name (model)Kan Electronics (MODEL6000)
Maximum sample size□20 mm
Maximum generated force (load)5 kgf (49 N)
Maximum temperature200 ℃
Chamber vacuum degreeAtmospheric pressure (N2 gas flow possible)
Maximum applied voltageNo voltage applied
Remarks

Flip chip bonder #2

Flip chip bonder #2
Manufacturer name (model)HiSOL (M-90)
Maximum sample sizeTop: □10 mm, bottom (Stage): 4 inch
Maximum generated force (load) 5.5 N
Maximum temperature350 ℃
Chamber vacuumAtmospheric pressure
Maximum applied voltageVoltage cannot be applied
Remarks

EVG plasma activator

EVG plasma activator
Manufacturer name (manufacturer name) Model)EV Group (EVG810)
Maximum sample size6 inch
Chamber vacuumAbout 1 Pa
OthersApplications for sample surface plasma treatment for low-temperature direct bonding
Remarks

EVG megasonic cleaner

EVG megasonic cleane
Manufacturer name (model) EV Group (EVG301)
Maximum sample size6 inch
OthersApplications for megasonic cleaning of the sample surface before treatment with the EVG plasma surface activation device, sample cleaning with a brush is possible
Remarks

Laser dicer

Laser dicer
Manufacturer name ( Model)Self-made
Features / ApplicationsStealth dicing using laser
Laser specifications (oscillator, wavelength, output, etc.)Pulse fiber laser (manufactured by SPI Lasers, wavelength: 1064 nm, output: 12 W), pulse green laser (manufactured by Megaopto, wavelength: 532 nm, output: > 1.2 W (1 kHz), > 3.5 W (10 kHz))
Processing SizeMaximum 25 × 25 mm
Processing objectSilicon, Tempax, etc. (Consultation required)
OthersA crack layer is formed inside the sample (Si, etc.). Chips cannot be made by laser dicing alone, and external bending stress is required.
Remarks

Dicer

Dicer
Manufacturer name (model)DISCO (DAD3240)
UseCutting wafers (Si, glass, crystal, lithium niobate, etc.)
Sample sizeMaximum ⌀152.4 mm
OthersMust be pasted on dicing tape, etc.
Remarks

Polishing machine

Polishing machine
Manufacturer name (model)Logistech (PM5)
UsePolishing of wafers
Sample sizeMaximum ⌀4 inch
Others
Remarks

Grinding machine

Grinding machine
Manufacturer name (model)Nanofactor (NVG-200A)
ApplicationGrinding of samples
Main specificationsRotation speed: 100–600 rpm, Machining accuracy: 10 μm
Sample size100 mm, Height: 20 mm
Remarks