- table of contents
Cutting, polishing, bonding
See the Remarks section of each facilitiy regarding availability for off-campus users.
EVG Wafer bonder
| Manufacturer name (model) | EV Group (EVG520)
|
| Maximum sample size | 4 inch |
| Maximum generated force (load) | 3500 N |
| Maximum temperature | 550 ℃ |
| Chamber vacuum degree | 10−2 Pa |
| Maximum applied voltage | 1200 V |
| Others | Bond alignment is possible with the EVG mask aligner installed in this facility
|
| Remarks | |
Wafer bonder (Technofine)
| Manufacturer name (model) | Technofine (SG-560) |
| Maximum sample size | 4 inch |
| Maximum generated force (load) | 10000 N |
| Maximum temperature | 350 ℃ |
| Chamber vacuum | 5 x 10−3 Pa |
| Maximum applied voltage | Not compatible |
| Remarks | |
Flip chip bonder #1
| Manufacturer name (model) | Kan Electronics (MODEL6000) |
| Maximum sample size | □20 mm |
| Maximum generated force (load) | 5 kgf (49 N) |
| Maximum temperature | 200 ℃
|
| Chamber vacuum degree | Atmospheric pressure (N2 gas flow possible) |
| Maximum applied voltage | No voltage applied |
| Remarks | |
Flip chip bonder #2
| Manufacturer name (model) | HiSOL (M-90) |
| Maximum sample size | Top: □10 mm, bottom (Stage): 4 inch |
| Maximum generated force (load) | 5.5 N |
| Maximum temperature | 350 ℃ |
| Chamber vacuum | Atmospheric pressure |
| Maximum applied voltage | Voltage cannot be applied
|
| Remarks | |
EVG plasma activator
| Manufacturer name (manufacturer name) Model) | EV Group (EVG810) |
| Maximum sample size | 6 inch |
| Chamber vacuum | About 1 Pa |
| Others | Applications for sample surface plasma treatment for low-temperature direct bonding
|
| Remarks | Available for off-campus users |
EVG megasonic cleaner
| Manufacturer name (model) | EV Group (EVG301) |
| Maximum sample size | 6 inch |
| Others | Applications for megasonic cleaning of the sample surface before treatment with the EVG plasma surface activation device, sample cleaning with a brush is possible
|
| Remarks | Available for off-campus users |
Laser dicer
| Manufacturer name ( Model) | Self-made
|
| Features / Applications | Stealth dicing using laser
|
| Laser specifications (oscillator, wavelength, output, etc.) | Pulse fiber laser (manufactured by SPI Lasers, wavelength: 1064 nm, output: 12 W), pulse green laser (manufactured by Megaopto, wavelength: 532 nm, output: > 1.2 W (1 kHz), > 3.5 W (10 kHz))
|
| Processing Size | Maximum 25 × 25 mm
|
| Processing object | Silicon, Tempax, etc. (Consultation required) |
| Others | A crack layer is formed inside the sample (Si, etc.). Chips cannot be made by laser dicing alone, and external bending stress is required.
|
| Remarks | |
Dicer
| Manufacturer name (model) | DISCO (DAD3240) |
| Use | Cutting wafers (Si, glass, crystal, lithium niobate, etc.) |
| Sample size | Maximum ⌀152.4 mm |
| Others | Must be pasted on dicing tape, etc. |
| Remarks | Available for off-campus users |
Polishing machine
| Manufacturer name (model) | Logistech (PM5) |
| Use | Polishing of wafers |
| Sample size | Maximum ⌀4 inch |
| Others | |
| Remarks | |
Grinding machine
| Manufacturer name (model) | Nanofactor (NVG-200A) |
| Application | Grinding of samples |
| Main specifications | Rotation speed: 100–600 rpm, Machining accuracy: 10 μm |
| Sample size | 100 mm, Height: 20 mm |
| Remarks | |
Tohoku University
