- table of contents
Synthesis, heat treatment, doping
See the Remarks section of each facilitiy regarding availability for off-campus users.
High-temp Oven
| Manufacturer name (model) | ADVANTEC (DRD360DA) |
| Other | Temperature range 50℃–650℃ |
| Remarks | |
Lamp annealing furnace
| Manufacturer name (model) | 明純技術支援 |
| Other | |
| Remarks | |
Ion implantation
| Manufacturer name (model)
| ULVAC (IMX-3500)
|
| Application (ApplicationFeatures) | Injection of semiconductor dopant |
| Main specifications | Ion species: B, P, As, Injection energy: 5–150 keV
|
| Sample size | Maximum ⌀8 inch |
| Others | |
| Remarks | |
H2 anneal furnace
| Manufacturer name (model) | Koyo Thermo System (Model 200) |
| Application (feature) | H2 annealing treatment |
| Main specifications | Gas type: H2, N2 |
| Sample size | ⌀2 inch |
| Others | Mainly the sintering process of the transistor process
|
| Remarks | |
RTA #1
| Manufacturer name (model) | Koyo Thermo System (RLA-1208-V)
|
| Use | Dopant activation for source/drain formation |
| Process gas | Ar, N2 |
| Workable materials | Si, SiO2, SiN |
| Sample size | Maximum ⌀8 inch |
| Remarks | Available for off-campus users |
Tohoku University
