Micro/Nano-Machining Research and Education Center, Tohoku University

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FacilitiesLithography/exposure/drawing equipment

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Lithography/exposure/drawing equipment

EB lithography system

FE-SEM
TypeElectron beam lithography
Manufacturer name (model)JEOL (JBX-6300SK)
Light sourceEB
Resolution50 nm
Sample size⌀2 inch, □20 mm
Others
Remarks

Laser lithography system #1

Laser lithography system #1
TypeLaser lithography
Manufacturer name (model)Heidelberg (DWL2000SD)
Light sourceSemiconductor laser (405 nm)
Resolution0.6 μm
Sample sizeMaximum □9 inch
OtherInstalled in the Micro-Machining building.
Remarks

Laser lithography system #2

Laser lithography system #2
TypeLaser lithography
Manufacturer name (model)Heidelberg (DWL200)
Light sourceSemiconductor laser (405 nm)
Resolution2 μm
Sample sizeMaximum 8 inch
OtherInstalled in the Nano-Machining building.
Remarks

Simple photo-mask maker

Simple photo-mask maker
Type1/5 reduced exposure photo mask making machine (OHP mask negative)
Manufacturer name (model)Nanotech (MM605)
Light sourceFluorescent lamp (30W x 3)
ResolutionL/S = about 200 μm
Sample sizeImaging dimensions: 59.4 x 59.4 mm
Others]Mask: OHP mask negative preparation by inkjet/Emulsion mask, magnification: 0.2 times, field dimensions: 297 x 297 mm, exposure timer: 99.9 s (0.1 s)
Remarks

Pattern generator

Pattern generator
TypeMask making machine
Manufacturer name (model)Nippon Seiko (TZ-310)
Light sourceMercury lamp, xenon lamp
Resolution1 μm
Sample size2 inch, 5 inch, 7 inch
Others
Remarks

Mask aligner (SUSS) #1, #2

Mask aligner (SUSS)
TypeMask aligner
Manufacturer name (model) SUSS MicroTec (MA6)
Light sourceMercury lamp
Resolution1–2 μm
Sample sizeMaximum 6 inch
Mask size2–7 inch
Others
Remarks

EVG Mask aligner

EVG Mask aligner
TypeMask aligner
Manufacturer name (model)EV group (EVG620) [
Light sourceMercury lamp
Resolution1–2 μm
Sample size□20 mm–6 inch
Mask size2–7 inch
OthersBond alignment is possible.
Remarks

Ushio projection aligner

Ushio projection aligner
TypeProjection exposure
Manufacturer name (model)Ushio (UX-2003SM-AGG01)
Light sourceMercury lamp
Resolution7 μm
Sample size□20 mm, 2 inch, 4 inch
Mask size2–5 inch
OthersThe mask and sample do not contact during exposure. It is possible to expose to a structure with steps (maximum 50 μm).
Remarks