- table of contents
Lithography/exposure/drawing equipment
See the Remarks section of each facilitiy regarding availability for off-campus users.
EB lithography system
| Type | Electron beam lithography
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| Manufacturer name (model) | JEOL (JBX-6300SK)
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| Light source | EB |
| Resolution | 50 nm |
| Sample size | ⌀2 inch, □20 mm |
| Others | |
| Remarks | Available for off-campus users |
Laser lithography system #1
| Type | Laser lithography |
| Manufacturer name (model) | Heidelberg (DWL2000SD) |
| Light source | Semiconductor laser (405 nm) |
| Resolution | 0.6 μm |
| Sample size | Maximum □9 inch |
| Other | Installed in the Micro-Machining building.
|
| Remarks | Available for off-campus users |
Laser lithography system #2
| Type | Laser lithography |
| Manufacturer name (model) | Heidelberg (DWL200) |
| Light source | Semiconductor laser (405 nm) |
| Resolution | 2 μm |
| Sample size | Maximum 8 inch |
| Other | Installed in the Nano-Machining building. |
| Remarks | |
Simple photo-mask maker
| Type | 1/5 reduced exposure photo mask making machine (OHP mask negative) |
| Manufacturer name (model) | Nanotech (MM605) |
| Light source | Fluorescent lamp (30W x 3)
|
| Resolution | L/S = about 200 μm |
| Sample size | Imaging dimensions: 59.4 x 59.4 mm |
| Others | ]Mask: OHP mask negative preparation by inkjet/Emulsion mask, magnification: 0.2 times, field dimensions: 297 x 297 mm, exposure timer: 99.9 s (0.1 s)
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| Remarks | |
Pattern generator
| Type | Mask making machine |
| Manufacturer name (model) | Nippon Seiko (TZ-310) |
| Light source | Mercury lamp, xenon lamp |
| Resolution | 1 μm |
| Sample size | 2 inch, 5 inch, 7 inch |
| Others | |
| Remarks | |
Mask aligner (SUSS) #1, #2
| Type | Mask aligner |
| Manufacturer name (model) | SUSS MicroTec (MA6) |
| Light source | Mercury lamp
|
| Resolution | 1–2 μm |
| Sample size | Maximum 6 inch |
| Mask size | 2–7 inch |
| Others | |
| Remarks | Available for off-campus users |
EVG Mask aligner
| Type | Mask aligner |
| Manufacturer name (model) | EV group (EVG620)
[ |
| Light source | Mercury lamp |
| Resolution | 1–2 μm |
| Sample size | □20 mm–6 inch |
| Mask size | 2–7 inch |
| Others | Bond alignment is possible. |
| Remarks | |
Ushio projection aligner
| Type | Projection exposure |
| Manufacturer name (model) | Ushio (UX-2003SM-AGG01) |
| Light source | Mercury lamp |
| Resolution | 7 μm |
| Sample size | □20 mm, 2 inch, 4 inch |
| Mask size | 2–5 inch |
| Others | The mask and sample do not contact during exposure. It is possible to expose to a structure with steps (maximum 50 μm). |
| Remarks | |
Tohoku University
