Micro/Nano-Machining Research and Education Center, Tohoku University
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FacilitiesLithography/exposure/drawing equipment
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Lithography/exposure/drawing equipment
EB lithography system
Type | Electron beam lithography
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Manufacturer name (model) | JEOL (JBX-6300SK)
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Light source | EB |
Resolution | 50 nm |
Sample size | ⌀2 inch, □20 mm |
Others | |
Remarks | |
Laser lithography system #1
Type | Laser lithography |
Manufacturer name (model) | Heidelberg (DWL2000SD) |
Light source | Semiconductor laser (405 nm) |
Resolution | 0.6 μm |
Sample size | Maximum □9 inch |
Other | Installed in the Micro-Machining building.
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Remarks | |
Laser lithography system #2
Type | Laser lithography |
Manufacturer name (model) | Heidelberg (DWL200) |
Light source | Semiconductor laser (405 nm) |
Resolution | 2 μm |
Sample size | Maximum 8 inch |
Other | Installed in the Nano-Machining building. |
Remarks | |
Simple photo-mask maker
Type | 1/5 reduced exposure photo mask making machine (OHP mask negative) |
Manufacturer name (model) | Nanotech (MM605) |
Light source | Fluorescent lamp (30W x 3)
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Resolution | L/S = about 200 μm |
Sample size | Imaging dimensions: 59.4 x 59.4 mm |
Others | ]Mask: OHP mask negative preparation by inkjet/Emulsion mask, magnification: 0.2 times, field dimensions: 297 x 297 mm, exposure timer: 99.9 s (0.1 s)
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Remarks | |
Pattern generator
Type | Mask making machine |
Manufacturer name (model) | Nippon Seiko (TZ-310) |
Light source | Mercury lamp, xenon lamp |
Resolution | 1 μm |
Sample size | 2 inch, 5 inch, 7 inch |
Others | |
Remarks | |
Mask aligner (SUSS) #1, #2
Type | Mask aligner |
Manufacturer name (model) | SUSS MicroTec (MA6) |
Light source | Mercury lamp
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Resolution | 1–2 μm |
Sample size | Maximum 6 inch |
Mask size | 2–7 inch |
Others | |
Remarks | |
EVG Mask aligner
Type | Mask aligner |
Manufacturer name (model) | EV group (EVG620)
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Light source | Mercury lamp |
Resolution | 1–2 μm |
Sample size | □20 mm–6 inch |
Mask size | 2–7 inch |
Others | Bond alignment is possible. |
Remarks | |
Ushio projection aligner
Type | Projection exposure |
Manufacturer name (model) | Ushio (UX-2003SM-AGG01) |
Light source | Mercury lamp |
Resolution | 7 μm |
Sample size | □20 mm, 2 inch, 4 inch |
Mask size | 2–5 inch |
Others | The mask and sample do not contact during exposure. It is possible to expose to a structure with steps (maximum 50 μm). |
Remarks | |