Micro/Nano-Machining Research and Education Center, Tohoku University
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FacilitiesLithography/exposure/drawing equipment
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Lithography/exposure/drawing equipment
EB Lithograpy
| Type | Electron beam lithography
|
| Manufacturer name (model) | JEOL (JBX-6300SK)
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| Light source | EB |
| Resolution | 50 nm |
| Sample size | ⌀2 inch, □20 mm |
| Others | |
| Remarks | |
Laser lithography system #1
| Type | Laser lithography |
| Manufacturer name (model) | Heidelberg (DWL2000SD) |
| Light source | Semiconductor laser (405 nm) |
| Resolution | 0.6 μm |
| Sample size | Maximum □9 inch |
| Other | Installed in the Micro-Machining building.
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| Remarks | |
Simple photo-mask maker(MM605AT)
| Type | 1/5 reduced exposure photo mask making machine (OHP mask negative) |
| Manufacturer name (model) | Nanotech (MM605) |
| Light source | Fluorescent lamp (30W x 3)
|
| Resolution | L/S = about 200 μm |
| Sample size | Imaging dimensions: 59.4 x 59.4 mm |
| Others | ]Mask: OHP mask negative preparation by inkjet/Emulsion mask, magnification: 0.2 times, field dimensions: 297 x 297 mm, exposure timer: 99.9 s (0.1 s)
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| Remarks | |
Mask aligner(SUSS, MA6/BA6)#1,#2
| Type | Mask aligner |
| Manufacturer name (model) | SUSS MicroTec (MA6) |
| Light source | Mercury lamp
|
| Resolution | 1–2 μm |
| Sample size | Maximum 6 inch |
| Mask size | 2–7 inch |
| Others | |
| Remarks | |
EVG Mask aligner
| Type | Mask aligner |
| Manufacturer name (model) | EV group (EVG620)
[ |
| Light source | Mercury lamp |
| Resolution | 1–2 μm |
| Sample size | □20 mm–6 inch |
| Mask size | 2–7 inch |
| Others | Bond alignment is possible. |
| Remarks | |
Spray coater(Delta 80RC)
| Manufacturer name (model) | SUSS(Delta 80RC) |
| Sample size | Capable of handling wafers of 8 inch and/or smaller
(Samples other than 8-inch wafers are affixed to an 8-inch wafer using Kapton tape before coating) |
| Others | |
| Remarks | |
Mask aligner#3(SUSS, MA8/BA8)
| Manufacturer name (model) | SUSS MicroTec MA8/BA8 |
| Light source | Mercury lamp
(OSRAM HBO 1000 W) |
| Resolution | 2µm |
| Sample size | 2-inch or 8-inch (existing holder) |
| Mask size | 3-inch or 9-inch (existing holder) |
| Sample size | Minimum 1 inch to maximum 8 inche |
| Others | Alignment accuracy: 1 µm (nominal value)
i-line filter can be used |
| Remarks | |
Lift-off EQP(LOB8)
| Manufacturer name (model) | ASAP(LOM8-000-12) |
| Sample size | 2, 4, 6, 8-inch wafer |
| Main specifications | Photoresist removal |
| Others | Solvents used: IPA and/or NMP |
| Remarks | |
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