Fabrication and Evaluation of Metallic Nanowires by Utilizing Atomic Migration Phenomena
Bottom-up technologies, which construct materials or structures from individual atoms and molecules, have attracted considerable attentions for fabricating the nano- or micro-scaled structures. An approach for fabricating metallic nanowires by utilizing atomic migration phenomena has been proposed as a new bottom-up technology. The Al thin wire having the diameter around 1μm and the length over 100μm is successfully fabricated by utilizing high density electron flow induced electromigration. Also, the mass production of Cu nanowires with the diameter of 10 to 40 nm is successful by using the stress migration which causes due to the gradient of hydrostatic stress in a sample. Furthermore, advanced technologies are under developing for evaluating the mechanical and electrical properties of these newly fabricated nanowires.
Fig.3 Fabrication of metallic nanowires
Research theme: Next
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