{"id":133,"date":"2022-01-12T10:39:03","date_gmt":"2022-01-12T01:39:03","guid":{"rendered":"https:\/\/web.tohoku.ac.jp\/mnc\/?page_id=133"},"modified":"2026-01-20T14:20:23","modified_gmt":"2026-01-20T05:20:23","slug":"equipment03","status":"publish","type":"page","link":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/facilities\/equipment03","title":{"rendered":"Film processing\/etching"},"content":{"rendered":"<dl class=\"localnav\">\n\t<dt>table of contents<\/dt>\n\t<dd><ul><li><a href=\"\/mnc\/facilities\/equipment01\">Lithography\/exposure\/drawing equipment<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment02\">Film formation\/deposition<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment03\">Film processing\/etching<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment04\">Synthesis, heat treatment, doping<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment05\">Surface treatment<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment06\">Bonding, polishing, packaging<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment07\">Shape\/morphology observation, analysis<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment08\">Sample preparation equipment<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment09\">Electrical measurement<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment10\">Mechanical measurement<\/a><\/li><li><a href=\"\/mnc\/facilities\/equipment11\">Others<\/a><\/li><\/ul><\/dd>\n<\/dl>\n\n\n\n<h2>Film processing\/etching<\/h2>\n\n\n\n<h3 id=\"equipment03-15\">Asher for general use<\/h3>\n\n\n\n<div class=\"wp-container-42 wp-block-columns\">\n<div class=\"wp-container-40 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2024\/01\/equipment03-15.jpg\" alt=\"Asher for general use\" class=\"wp-image-1922\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2024\/01\/equipment03-15.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2024\/01\/equipment03-15-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-41 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>Self-made<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>Maximum 4 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>CF4, O<sub>2<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others<\/th><td><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-01\">ICP-RIE#1(MUC21)<\/h3>\n\n\n\n<div class=\"wp-container-45 wp-block-columns\">\n<div class=\"wp-container-43 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/12-3.jpg\" alt=\"ICP-RIE#1(MUC21)\" class=\"wp-image-910\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/12-3.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/12-3-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-44 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>SPP Technologies (MUC21)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Application<\/th><td>Gate electrode formation<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>SF<sub>6<\/sub>, C<sub>4<\/sub>F<sub>8<\/sub>, HBr, Cl<sub>2<\/sub>, Ar, O<sub>2<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Materials that can be introduced<\/th><td>Si, SiO<sub>2<\/sub>, resist<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>Maximum \u23002 inch\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>150 nm\/min (Poly-Si)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>10<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasmaExcitation method, power supply output, etc.)<\/th><td>Plasma excitation method: induction coupling type\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-02\">ICP-RIE#2(MUC-21)<\/h3>\n\n\n\n<div class=\"wp-container-48 wp-block-columns\">\n<div class=\"wp-container-46 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/23.jpg\" alt=\"ICP-RIE#2(MUC-21)\" class=\"wp-image-911\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/23.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/23-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-47 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>Sumitomo Precision Products (MUC-21 ASE-SRE)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>High aspect ratio Si etching<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>SF<sub>6<\/sub>, C<sub>4<\/sub>F<sub>8<\/sub>, O<sub>2<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Materials that can be introduced<\/th><td>Si, SiO<sub>2<\/sub>, positive resist<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>Maximum \u23004 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>1.5\u20137.5 <span class=\"unit_micro\">\u03bc<\/span>m\/min (Si)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>50\u2013250 (photoresist)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power output, etc.)<\/th><td>Plasma excitation method: induction coupling type, ICP power: maximum 1000 W, bias power: maximum 100 W\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-03\">ICP-RIE#3(Pegasus, MPX)<\/h3>\n\n\n\n<div class=\"wp-container-51 wp-block-columns\">\n<div class=\"wp-container-49 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/09-7.jpg\" alt=\"ICP-RIE#3(Pegasus, MPX)\" class=\"wp-image-916\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/09-7.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/09-7-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-50 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model) )<\/th><td>ANELVA (L-201D-L)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>Al, W, SiO<sub>2<\/sub>&nbsp;cleavage<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>BCl<sub>3<\/sub>, Cl<sub>2<\/sub>, O<sub>2<\/sub>, Ar, H<sub>2<\/sub>, CF<sub>4<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Induction materials<\/th><td>Al, W, Si, SiO<sub>2<\/sub>, resist<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>\u23002 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>100 nm\/min (SiO<sub>2<\/sub>)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>1:5<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Plasma excitation method: CCP\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-04\">FAB<\/h3>\n\n\n\n<div class=\"wp-container-54 wp-block-columns\">\n<div class=\"wp-container-52 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/26.jpg\" alt=\"FAB\" class=\"wp-image-917\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/26.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/26-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-53 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>Ebara (FAB-60 ML type)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>High-precision vertical machining with high-speed atomic rays<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>SF<sub>6<\/sub>, O<sub>2<\/sub>, CHF<sub>3<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Materials that can be introduced<\/th><td>Metal, Si, etc.<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>\u30b5Sample size<\/th><td>\u25a120 mm<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>34 nm\/min (Si)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>1:1.5 (photoresist)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-05\">CCP-RIE #1<\/h3>\n\n\n\n<div class=\"wp-container-57 wp-block-columns\">\n<div class=\"wp-container-55 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/25.jpg\" alt=\"CCP-RIE #1\" class=\"wp-image-918\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/25.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/25-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-56 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name(Model)<\/th><td>ANELVA (L-201D-L)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>Metal and dielectric material photoresist<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>SF<sub>6<\/sub>, CF<sub>4<\/sub>, Ar, O<sub>2<\/sub>, CHF<sub>3<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Workable materials<\/th><td>No limitation<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>Maximum \u23003 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>70 nm\/min (SiO<sub>2<\/sub>), 10 nm\/min (Pt)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>1:2\u20133 (photoresist: SiO<sub>2<\/sub>)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Plasma excitation Method: CCP (parallel flat plate)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-06\">CCP-RIE #2<\/h3>\n\n\n\n<div class=\"wp-container-60 wp-block-columns\">\n<div class=\"wp-container-58 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/19.jpg\" alt=\"CCP-RIE #2\" class=\"wp-image-919\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/19.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/19-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-59 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>ANELVA (L-201D-L)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Application<\/th><td>Sample etching of semiconductors, Plasma, etc.<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>Ar, N<sub>2<\/sub>, O<sub>2<\/sub>, Cl<sub>2<\/sub>, BCl<sub>3<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Materials that can be introduced<\/th><td>Samples of semiconductors, Plasma, etc.<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>3 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others<\/th><td>RF &lt; 100 W<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-07\">CCP-RIE #3<\/h3>\n\n\n\n<div class=\"wp-container-63 wp-block-columns\">\n<div class=\"wp-container-61 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/18.jpg\" alt=\"CCP-RIE #3\" class=\"wp-image-920\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/18.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/18-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-62 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>ANELVA (L-201D-L)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>Al, W, SiO<sub>2<\/sub>&nbsp;cleavage<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>BCl3, Cl<sub>2<\/sub>, O<sub>2<\/sub>, Ar, H<sub>2<\/sub>, CF<sub>4<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Induction materials<\/th><td> Al, W, Si, SiO<sub>2<\/sub>, resist<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>\u23002 inch\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>100 nm\/min (SiO<sub>2<\/sub>)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>1:5\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Plasma excitation method: CCP\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-08\">Ion beam milling<\/h3>\n\n\n\n<div class=\"wp-container-66 wp-block-columns\">\n<div class=\"wp-container-64 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/27.jpg\" alt=\"Ion beam milling\" class=\"wp-image-921\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/27.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/27-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-65 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>Hakuto Co., Ltd. (IBE-KDC 75)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Application<\/th><td>Microfabrication of materials (Pt, etc.) that cannot be handled by RIE equipment\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Microfabrication of materials (Pt, etc.) that cannot be handled by RIE equipment\n<\/th><td>Ar\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>20 mm, 3 inch, 4 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Materials that can be introduced<\/th><td>Other than harmful substances (Pb, As, etc.), other than low vapor pressure substances (Zn, etc.)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>Pt 30 nm\/min\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Kaufman type plasma generator\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-09\">Dual frequency RIE<\/h3>\n\n\n\n<div class=\"wp-container-69 wp-block-columns\">\n<div class=\"wp-container-67 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/20.jpg\" alt=\"Dual frequency RIE\" class=\"wp-image-922\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/20.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/20-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-68 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>ANELVA (L-211D)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>For source \/ drain contact etching<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>C<sub>4<\/sub>F<sub>8<\/sub>, Ar, O<sub>2<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>SampleSize<\/th><td>\u23002 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Workable material<\/th><td>Si substrate<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>300 nm\/min\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>1:10<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Dual frequency excitation\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-10\">SiN etcher<\/h3>\n\n\n\n<div class=\"wp-container-72 wp-block-columns\">\n<div class=\"wp-container-70 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/16.jpg\" alt=\"SiN etcher\" class=\"wp-image-923\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/16.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/16-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-71 wp-block-column\">\n<td1:10< td=\"\">\n\t<\/td1:10<><table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (Manufacturer name) Model)<\/th><td>Samco (RIE-10NR)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Use<\/th><td>For SiN etching of LOCOS<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>CF<sub>4<\/sub>, H<sub>2<\/sub>, O<sub>2<\/sub>, SF<sub>6<\/sub><\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>\u23002 inch<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Workable material<\/th><td>Si substrate<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>100 nm\/min<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th>\n<td>1:10<\/td>\n<\/tr>\n\t<tr>\n\t\t<th>Others (plasma excitation method, power supply output, etc.)<\/th><td>Parallel plate type\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-13\">Isotropic Si etcher<\/h3>\n\n\n\n<div class=\"wp-container-75 wp-block-columns\">\n<div class=\"wp-container-73 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/05-8.jpg\" alt=\"Isotropic Si etcher\" class=\"wp-image-926\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/05-8.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/05-8-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-74 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>Self-made<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Applications<\/th><td>Si selective etching<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Process gas<\/th><td>XeF2<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Workable materials<\/th><td>Si, SiO<sub>2<\/sub>, positive resist, metal<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Sample size<\/th><td>\u25a120 mm\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Etching rate<\/th><td>Varies depending on the area of \u200b\u200bthe material to be processed<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Selection ratio<\/th><td>10000 (SiO<sub>2<\/sub>)<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<h3 id=\"equipment03-14\">YAG laser<\/h3>\n\n\n\n<div class=\"wp-container-78 wp-block-columns\">\n<div class=\"wp-container-76 wp-block-column\"><div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><img loading=\"lazy\" width=\"480\" height=\"640\" src=\"\/mnc\/wp-content\/uploads\/2022\/02\/01-9.jpg\" alt=\"YAG laser\" class=\"wp-image-927\" srcset=\"https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/01-9.jpg 480w, https:\/\/web.tohoku.ac.jp\/mnc\/wp-content\/uploads\/2022\/02\/01-9-353x470.jpg 353w\" sizes=\"(max-width: 480px) 100vw, 480px\" \/><\/figure><\/div><\/div>\n\n\n\n<div class=\"wp-container-77 wp-block-column\">\n<table>\n\t<tbody><tr>\n\t\t<th>Manufacturer name (model)<\/th><td>NEC (Nd:YAG Laser SL 115G)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Features\/Applications<\/th><td>Dry Process &amp; local processing, separation of manufactured devices, cutting of stainless steel, SMA, etc. and selective removal of coatings on welded metal wires, PZT laser-assisted etching\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Laser specifications (oscillator, wavelength, output, etc.)<\/th><td>Nd:YAG laser (Q switch used, wavelength: 1064 nm, output: 100 W)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Processing size<\/th><td>50 \u00d7 50 mm<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Processing object<\/th><td>Silicon, glass, stainless steel, SMA, PZT, etc. (Consultation required)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Other<\/th><td>Processing accuracy: 30\u2013approximately 40 <span class=\"unit_micro\">\u03bc<\/span>m, current range: 24\u201326 A (silicon), 40\u201342 A (glass)\n<\/td>\n\t<\/tr>\n\t<tr>\n\t\t<th>Remarks<\/th><td><\/td>\n\t<\/tr>\n<\/tbody><\/table>\n<\/div>\n<\/div>\n\n\n\n<p><\/p>","protected":false},"excerpt":{"rendered":"<p>table of contents Lithography\/exposure\/drawing equipment Film formation\/deposition Film processing\/etching Syn [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":12,"menu_order":13,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v20.0 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Film processing\/etching | Facilities | Tohoku University Smart System Super Integration Research Center<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/web.tohoku.ac.jp\/mnc\/en\/facilities\/equipment03\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta 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Center","description":"Venture Business Laboratory (VBL), the predecessor of Smart System Super Integration Research Center (SIRC), was established by a fund for creative research projects in the FY 1995 Supplementary Budget of the Japanese government.","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"en-US"}]}},"_links":{"self":[{"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/pages\/133"}],"collection":[{"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/comments?post=133"}],"version-history":[{"count":67,"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/pages\/133\/revisions"}],"predecessor-version":[{"id":2380,"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/pages\/133\/revisions\/2380"}],"up":[{"embeddable":true,"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/pages\/12"}],"wp:attachment":[{"href":"https:\/\/web.tohoku.ac.jp\/mnc\/en\/wp-json\/wp\/v2\/media?parent=133"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}